RHEED studies of heterojunction and quantum well formation during MBE growth — from multiple scattering to band offsets-Reference-Cited by-同舟云学术

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RHEED studies of heterojunction and quantum well formation during MBE growth — from multiple scattering to band offsets

Published:1986-03 Issue:1-3 Volume:168 Page:423-438
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Joyce B.A.,Dobson P.J.,Neave J.H.,Woodbridge K.,Zhang Jing,Larsen P.K.,Bôlger B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference37 articles.

1. Analysis of reflection high-energy electron-diffraction data from reconstructed semiconductor surfaces

2. Dynamics of film growth of GaAs by MBE from Rheed observations

3. Damped oscillations in reflection high energy electron diffraction during GaAs MBE

4. RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain-induced effects during InGaAs growth on GaAs(100)

5. Phase-Locked Epitaxy Using RHEED Intensity Oscillation

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