Structural and optical properties of epitaxially overgrown third-order gratings for InGaN/GaN-based distributed feedback lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122565
Reference12 articles.
1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
2. Surface‐mode stimulated emission from optically pumped GaInN at room temperature
3. Gain characteristics of InGaN/GaN quantum well diode lasers
4. Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
5. Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes
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2. Narrow-line InGaN/GaN green laser diode with high-order distributed-feedback surface grating;Applied Physics Express;2019-03-27
3. X-ray diffraction study of AlN∕AlGaN short period superlattices;Journal of Applied Physics;2007-12
4. CW Operation of the First-Order AlInGaN 405 nm Distributed Feedback Laser Diodes;Japanese Journal of Applied Physics;2006-11-17
5. Fabrication of Gallium Nitride Grating by Interferometric Irradiation Using Focused Femtosecond Laser;Japanese Journal of Applied Physics;2006-08-04
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