Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser‐modulator integration-Reference-Cited by-同舟云学术

Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser‐modulator integration

Published:1995-11 Issue:9 Volume:78 Page:5638-5641
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hamoudi A.,Rao E. V. K.,Krauz Ph.,Ramdane A.,Ougazzaden A.,Robein D.,Thibierge H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.359688

Reference6 articles.

1. InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD

2. Monolithic integration of a DFB laser and an MQW optical modulator in the 1.5 µm wavelength range

3. Monolithic integration of an (Al)GaAs laser and an intracavity electroabsorption modulator using selective partial interdiffusion

4. Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−xAs‐GaAs quantum‐well heterostructures

5. New encapsulant source for III–V quantum well disordering

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1. SiNx-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms;Journal of Applied Physics;2012-11

2. Quantum well intermixing in AlInGaAs QW structures through the interdiffusion of group III atoms;SPIE Proceedings;2012-06-01

3. Bandgap Tuning in InGaAs/InGaAsP Laser Structure by Quantum Well Intermixing;Korean Journal of Optics and Photonics;2005-02-01

4. Thermal stability of 1.55 μm quantum well laser structures grown by gas-source molecular beam epitaxy;Materials Science and Engineering: B;2003-10

5. Controlled group V intermixing in InGaAsP quantum well structures and its application to the fabrication of two section tunable lasers;Journal of Applied Physics;2002-10-15