Thermal stability of 1.55 μm quantum well laser structures grown by gas-source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser‐modulator integration
2. Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion
3. Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers
4. Bandgap tuning of In0.53Ga0.47As/InP multiquantum well structure by impurity free vacancy diffusion using In0.53Ga0.47As cap layer and SiO2 dielectric capping
5. Defect diffusion in ion implanted AlGaAs and InP: Consequences for quantum well intermixing
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mode Density Reduction and Coupling in Microdisk LASERs Processed on a 200-mm CMOS Pilot Line;IEEE Photonics Technology Letters;2011-09
2. Reduction of Absorption Loss in Asymmetric Twin Waveguide Laser Tapers Using Argon Plasma-Enhanced Quantum-Well Intermixing;IEEE Photonics Technology Letters;2004-10
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