A hybrid memristor with oxide-polymer heterojunction-Reference-Cited by-同舟云学术

A hybrid memristor with oxide-polymer heterojunction

Published:2022-11-07 Issue:19 Volume:121 Page:191905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Zhong-Da¹²,Zhong Ya-Nan¹²,Shen Cong¹²,Huang Hai-Tian¹²,Lu Zhen-Ni¹²,Xu Jian-Long¹²,Gao Xu¹²^ORCID,Wang Sui-Dong¹²³^ORCID

Affiliation:

1. Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, People's Republic of China

2. Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China

3. Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa 999078, Macao, People's Republic of China

Abstract

A hybrid memristor based on the bilayer structure of indium gallium zinc oxide (IGZO)/polyvinyl alcohol (PVA) is developed, which demonstrates device state updates in an analog manner with high reliability. The IGZO/PVA heterojunction is crucial for the realization of the memristive characteristics, presumably associated with oxygen ion redistribution across the IGZO/PVA interface. The hybrid memristor may act as an electronic synapse, being capable of emulating synaptic potentiation with good linearity, synaptic depression, and paired-pulse facilitation. It highlights potential applications of the oxide-polymer heterojunction in the exploration of neuromorphic devices.

Funder

National Natural Science Foundation of China

National Key R&D Program of China

Natural Science Foundation of Jiangsu Higher Education Institutions of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0123496

Reference29 articles.

1. Neuromorphic electronic systems