Study of plasma–surface interactions during overetch of polycrystalline silicon gate etching with high-density HBr/O2 plasmas
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1409952
Reference15 articles.
1. Very High Selective n+poly-Si RIE with Carbon Elimination
2. Reactive ion etching of silicon using bromine containing plasmas
3. Influence of Reaction Products on Si Gate Etching with a Photoresist Mask in HBr/O2and Cl2/O2Electron Cyclotron Resonance Plasma
4. Sidewall passivation during the etching of poly-Si in an electron cyclotron resonance plasma of HBr
5. Mechanism for anisotropic etching of photoresist-masked, polycrystalline silicon in HBr plasmas
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