Study and optimize on the process of Floating gate with dry etching-Reference-Cited by-同舟云学术

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Study and optimize on the process of Floating gate with dry etching

Published:2021-08-09 Issue:3 Volume:3 Page:035024
ISSN:2631-8695
Container-title:Engineering Research Express
language:
Short-container-title:Eng. Res. Express

Author:

Qingyao Gao^ORCID,Zhang Wenwen^ORCID,Renrui Huang,Yongzhi Fang,Liang Zhibin,Li Xiaohong,Zhu Wenming

Publisher

IOP Publishing

Subject

General Engineering

Link

https://iopscience.iop.org/article/10.1088/2631-8695/ac1451/pdf

Reference20 articles.

1. Sidewall-angle effect on the bottom etch profile in SiO2 etching using a CF4 plasma,;Lee;J. Vac. Sci. Technol. B,2001

2. Evaluation and decision making in Taiwan semiconductor industry through silicon via technology;Lin;J. Sci. Ind. Res. India,2014

3. Photoresist selectivity mechanism in SiO2 etching by inductively coupled plasma using fluorocarbon gases;Imai;J. Vac. Sci. Technol. B,2002

4. Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations

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