Sidewall-angle effect on the bottom etch profile in SiO[sub 2] etching using a CF[sub 4] plasma
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study and optimize on the process of Floating gate with dry etching;Engineering Research Express;2021-08-09
2. Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?;Japanese Journal of Applied Physics;2018-05-25
3. Plasma Etch;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09
4. Interactive relationships between sidewall and bottom etch rates, as-affected by sidewall angle, during SiO[sub 2] etching in a CHF[sub 3] plasma;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
5. Deep etching of silicon with smooth sidewalls by an improved gas-chopping process using a Faraday cage and a high bias voltage;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
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