Determination of relative impurity concentrations using photoluminescence: A case study of the Si: (B,In) system
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91776
Reference15 articles.
1. Determination of boron and phosphorus concentration in silicon by photoluminescence analysis
2. Analysis of the Exciton Luminescence of Silicon for Characterization of the Content of Impurities
3. New photoluminescence line-series spectra attributed to decay of multiexciton complexes bound to Li, B, and P centers in Si
4. Edge luminescence spectra of acceptors in Si: Implications for multiexciton complexes
5. Edge luminescence spectra of acceptors in Si: Implications for multiexciton complexes
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1. Mid-infrared modulated photoluminescence mapping to investigate in-plane distributions of bandedge transitions in As-doped HgCdTe;Applied Physics Letters;2023-10-09
2. A New Attempt to Determine the Mutual Influence of Phosphorus and Boron in Photoluminescence Investigations of Silicon;Crystal Research and Technology;1992
3. Comparison of Dopant Concentrations Determined by Photoluminescence and Hall Effect in Si:B, P;Crystal Research and Technology;1991
4. Determination of the Free Exciton Capture Cross Section of As Doped Silicon by Photoluminescence (PL);physica status solidi (a);1990-07-16
5. Determination of free exciton capture cross section of Si: Sb by photoluminescence (PL);Physica Status Solidi (a);1989-12-16
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