A New Attempt to Determine the Mutual Influence of Phosphorus and Boron in Photoluminescence Investigations of Silicon
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference14 articles.
1. A graphical treatment of combined evaporation and segregation contributions to impurity profiles for zone-refining in vacuum
2. Determination of relative impurity concentrations using photoluminescence: A case study of the Si: (B,In) system
3. A tunneling theory of exciton photoluminescence for neutral acceptors in silicon: A study of the systems Si: (B, In), Si: (Al, In), Si: (Ga, In), Si: (B, Al), Si: (B, Ga), and Si: (Al, Ga)
4. Calibration of the photoluminescence technique for measuring B, P and Al concentrations in Si in the range 1012to 1015cm-3using Fourier transform spectroscopy
5. Analysis of the Exciton Luminescence of Silicon for Characterization of the Content of Impurities
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