Low‐temperature selective epitaxy by ultrahigh‐vacuum chemical vapor deposition from SiH4and GeH4/H2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104998
Reference12 articles.
1. Selective epitaxial growth with oxide‐polycrystalline silicon‐oxide masks by rapid thermal processing chemical vapor deposition
2. Selective epitaxial silicon growth in the 650–1100 °C range in a reduced pressure chemical vapor deposition reactor using dichlorosilane
3. Low‐temperature selective epitaxial growth of silicon at atmospheric pressure
4. Silicon selective epitaxial growth at 800 °C using SiH4/H2assisted by H2/Ar plasma sputter
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