Silicon selective epitaxial growth at 800 °C using SiH4/H2assisted by H2/Ar plasma sputter
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101720
Reference16 articles.
1. Trench-isolated transistors in lateral CVD epitaxial silicon-on-insulator films
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3. Application of selective silicon epitaxial growth for CMOS technology
4. Selective Silicon Epitaxy Using Reduced Pressure Technique
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1. Integrated Circuits;Reference Data for Engineers;2002
2. Selective silicon epitaxy by photo-chemical vapor deposition at a very low temperature of 160°C;Journal of Electronic Materials;1995-10
3. Isolation Technology in Monolithic Integrated Circuits: An Overview;IETE Technical Review;1994-03
4. Intermittent ultraviolet irradiation for silicon selective epitaxial growth;Applied Physics Letters;1993-02-08
5. The selective epitaxial growth of silicon;Materials Science and Engineering: B;1993-02
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