1. On new device isolation technology with selective epitaxial growth;Endo;IEEE International Electron Devices Meeting Tech. Dig. Papers,1982
2. On CMOS technology using SEG isolation technique;Endo;IEEE International Electron Devices Meeting Tech. Dig. Papers,1983
3. On a new isolation technology for bipolar devices by low pressure selective silicon epitaxy;Hine;Symposium on VLSI Technology Tech. Dig. Papers,1982
4. On bipolar integrated circuits fabricated by low pressure selective silicon epitaxy;Hine;Extended Abstracts Electrochemical Society Fall Meeting,1983
5. On device isolation technology by selective low-pressure silicon epitaxy;Voss;IEEE International Electron Devices Meeting Tech. Dig. Papers,1983