Stability of sulfur-treated InP surface studied by photoluminescence and x-ray photoelectron spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365263
Reference34 articles.
1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
2. Sulfur bonding to GaAs
3. S‐passivated InP (100)‐(1×1) surface prepared by a wet chemical process
4. Surface chemical bonding of (NH4)2Sx‐treated InP(001)
5. Universal Passivation Effect of (NH4)2SxTreatment on the Surface of III-V Compound Semiconductors
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