Misfit accommodation of compact and columnar InN epilayers grown on Ga-face GaN (0001) by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1900310
Reference14 articles.
1. Transient electron transport in wurtzite GaN, InN, and AlN
2. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
3. Unusual properties of the fundamental band gap of InN
4. Indium nitride (InN): A review on growth, characterization, and properties
5. Plasma-assisted MBE growth and characterization of InN on sapphire
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