Experimental off-axis electron holography of focused ion beam-prepared Si p-n junctions with different dopant concentrations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2982415
Reference13 articles.
1. Two-Dimensional Mapping of the Electrostatic Potential in Transistors by Electron Holography
2. Quantitative Electron Holography of Biased Semiconductor Devices
3. Side-wall damage in a transmission electron microscopy specimen of crystalline Si prepared by focused ion beam etching
4. Reduction of electrical damage in specimens prepared using focused ion beam milling for dopant profiling using off-axis electron holography
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