Reduction of electrical damage in specimens prepared using focused ion beam milling for dopant profiling using off-axis electron holography
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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3. Conventional and back-side focused ion beam milling for off-axis electron holography of electrostatic potentials in transistors
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1. Mapping of the Electrostatic Potentials in a Fully Processed Led Device with nm‐Scale Resolution by In Situ off‐Axis Electron Holography;Small Methods;2023-05-18
2. Off-axis electron holography for the measurement of active dopants in silicon semiconductor devices;Journal of Physics D: Applied Physics;2016-10-28
3. Dopant mapping in thin FIB prepared silicon samples by Off-Axis Electron Holography;Ultramicroscopy;2014-03
4. Dopant profiling of focused ion beam milled semiconductors using off-axis electron holography; reducing artifacts, extending detection limits and reducing the effects of gallium implantation;Ultramicroscopy;2010-04
5. Extending the detection limit of dopants for focused ion beam prepared semiconductor specimens examined by off-axis electron holography;Journal of Applied Physics;2009-09-15
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