Dopant mapping in thin FIB prepared silicon samples by Off-Axis Electron Holography-Reference-Cited by-同舟云学术

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Dopant mapping in thin FIB prepared silicon samples by Off-Axis Electron Holography

Published:2014-03 Issue: Volume:138 Page:36-45
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Pantzer Adi,Vakahy Atsmon,Eliyahou Zohar,Levi George,Horvitz Dror,Kohn Amit

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Two-dimensional mapping of pn junctions by electron holography;Rau;Phys. Rev. Lett.,1999

2. Mapping of electrostatic potential in deep submicron CMOS devices by electron holography;Gribelyuk;Phys. Rev. Lett.,2002

3. Sample preparation for precise and quantitative electron holographic analysis of semiconductor devices;Han;Microsc. Microanal.,2006

4. Reduction of electrical damage in specimens prepared using focused ion beam milling for dopant profiling using off-axis electron holography;Cooper;Ultramicroscopy,2008

5. Dopant profiling of focused ion beam milled semiconductors using off-axis electron holography; reducing artifacts, extending detection limits and reducing the effects of gallium implantation;Cooper;Ultramicroscopy,2010

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