Molecular beam epitaxial growth and structural properties of HgCdTe layers on CdTe(211)B/Si(211) substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373631
Reference10 articles.
1. New development on the control of homoepitaxial and heteroepitaxial growth of CdTe and HgCdTe by MBE
2. MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress
3. MBE P-on-n Hg1−xCdxTe heterostructure detectors on silicon substrates
4. HgCdTe and CdTe(1̄ 1̄ 3̄)B growth on Si(112)5° off by molecular beam epitaxy
5. Characteristics of HgCdTe/CdTe hetero-epitaxial system and mid-wave diodes on 2 inch silicon
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