The method for extracting defect levels in the MCT multilayer low-bandgap heterostructures

Abstract

A method for defects extraction for a mercury cadmium telluride (MCT) multilayer low-bandgap heterostructure is presented. The N+/T/p/T/P+/n+ epitaxial layer was deposited on a GaAs substrate by a metal-organic chemical vapour deposition (MOCVD). The absorber was optimized for a cut-off wavelength of λc = 6 μm at 230 K. Deep-level transient spectroscopy (DLTS) measurements were conducted for the isolated junctions of the N+/T/p/T/P+/n+ heterostructure. Three localised point defects were extracted within the p-type active layer. Two of them were identified as electron traps and one as a hole trap, respectively.