Research of shot noise based on realistic nano-MOSFETs
Author:
Affiliation:
1. School of Electronic and Information Engineering, Ankang University, AnKang 725000, People’s Republic of China
2. Advanced Materials and Nano Technology School, Xidian University, Xi’an 710071, China
Funder
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4979885
Reference24 articles.
1. Shot Noise Modeling in Metal-Oxide-Semiconductor Field Effect Transistors under Sub-Threshold Condition
2. Shot noise effect on noise source and noise parameter of 10-nm-scale quasi-ballistic n-/p-type MOS devices
3. Single-electron quantum dots in silicon MOS structures
4. Electron transport through nano-MOSFET in presence of electron-electron interaction
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