Shot noise effect on noise source and noise parameter of 10-nm-scale quasi-ballistic n-/p-type MOS devices
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=5/a=054102/pdf
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis of Channel Current Noise in Small Nanoscale Metal Oxide Semiconductor Field Effect Transistors;Small;2024-08-21
2. CMOS Folded-Cascode versus Inverter-based CSA towards Noise Performance and Speed;2023 12th International Conference on Modern Circuits and Systems Technologies (MOCAST);2023-06-28
3. Physics-Informed Neural Network for High Frequency Noise Performance in Quasi-Ballistic MOSFETs;Electronics;2021-09-10
4. Shot noise model of the short channel metal-oxide-semiconductor field-effect transistor;Acta Physica Sinica;2020
5. Design optimization of RF low noise amplifier in twin-well CMOS process;Microwave and Optical Technology Letters;2017-09-22
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