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Design optimization of RF low noise amplifier in twin-well CMOS process

  • Published:2017-09-22 Issue:12 Volume:59 Page:3151-3154
  • ISSN:0895-2477
  • Container-title:Microwave and Optical Technology Letters
  • language:en
  • Short-container-title:Microw. Opt. Technol. Lett.

Author:

Jhon Hee-Sauk1,Jeon Jongwook2,Kang Myunggon3ORCID

Affiliation:

1. Wireless Semiconductor Division; broadcom, 16 Maeheonro, Seocho-gu; Seoul 06771 Republic of Korea

2. Department of Electronics Engineering, Konkuk University, Seoul, 05029, Korea

3. Department of Electronics Engineering; Korea National University of Transportation, 50 Daehak-ro, Chungju-si; Chungbuk 380-702 Korea

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Education

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surrogate based design optimization of low noise amplifier for ISM band;Sigma Journal of Engineering and Natural Sciences – Sigma Mühendislik ve Fen Bilimleri Dergisi;2022

2. Erratum for: Design optimization of RF low noise amplifier in twin-well CMOS process;Microwave and Optical Technology Letters;2018-01-10
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