The analysis of channel noise properties and its correlation in nanoscale metal–oxide–semiconductor field-effect transistors

Abstract

During the traditional channel noise modeling of nanoscale MOSFETs, neither the suppression of shot noise by Fermi and Coulomb effects nor the cross correlation noise between the source current noise and gate current noise is considered. However, they should not be ignored. In this study, the channel noise of a 22 nm MOSFET is tested experimentally, and the results show that the suppressed shot noise, the thermal noise, and the cross correlation noise are the main types of channel noises in nano-MOSFETs. Furthermore, according to the physical structure and characteristics of the MOSFET, a noise model, including the elements of shot noise, thermal noise, and cross correlation noise, is derived, which considers the influence of the shot noise suppressed by either the Fermi or Coulomb effects. Based on the model, the variation of noise with the channel length, temperature, source–drain voltage, and gate voltage is analyzed. The results are consistent with the experiments and theories in the literature.