Low dislocation density GaAs on Si heteroepitaxy with atomic hydrogen irradiation for optoelectronic integration
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354029
Reference22 articles.
1. Gallium arsenide and other compound semiconductors on silicon
2. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
3. Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices
4. Effect ofinsituandexsituannealing on dislocations in GaAs on Si substrates
5. Thermal annealing effects of defect reduction in GaAs on Si substrates
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