Double-layered vertically integrated amorphous-In2Ga2ZnO7 thin-film transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4827955
Reference5 articles.
1. Single-Crystalline Si STacked ARray (STAR) NAND Flash Memory
2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
3. Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process
4. Correlation of the change in transfer characteristics with the interfacial trap densities of amorphous In–Ga–Zn–O thin film transistors under light illumination
5. Control of threshold voltage in ZnO-based oxide thin film transistors
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1. Trench-Structured High-Current-Driving Aluminum-Doped Indium–Tin–Zinc Oxide Semiconductor Thin-Film Transistor;IEEE Electron Device Letters;2022-10
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3. Submicron Channel Length High-Performance Metal Oxide Thin-Film Transistors;IEEE Electron Device Letters;2021-09
4. Device Characterization of Nanoscale Vertical-Channel Transistors Implemented with a Mesa-Shaped SiO2 Spacer and an In–Ga–Zn–O Active Channel;ACS Applied Electronic Materials;2021-08-31
5. Recent Developments of Flexible InGaZnO Thin‐Film Transistors;physica status solidi (a);2021-02-17
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