Limits of strain relaxation in InGaAs∕GaAs probed in real time by in situ wafer curvature measurement
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2060947
Reference27 articles.
1. Defects in epitaxial multilayers I. Misfit dislocations
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4. In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system
5. Interpretation of dislocation propagation velocities in strained GexSi1−x/Si(100) heterostructures by the diffusive kink pair model
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