Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1 − xSrxSnO3 solid solution films
Author:
Affiliation:
1. Research Institute for Electronic Science, Hokkaido University, N20W10, Sapporo 001-0020, Japan
2. Graduate School of Information Science and Engineering, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan
Funder
Japan Society for the Promotion of Science
China Scholarship Council
Asahi Glass Foundation
Nippon Sheet Glass Foundation for Materials Science and Engineering
Mitsubishi Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0002172
Reference27 articles.
1. High Mobility in a Stable Transparent Perovskite Oxide
2. Physical properties of transparent perovskite oxides (Ba,La)SnO3with high electrical mobility at room temperature
3. Thermopower modulation clarification of the intrinsic effective mass in transparent oxide semiconductor BaSnO3
4. Thermopower Modulation Clarification of the Operating Mechanism in Wide Bandgap BaSnO3 -SrSnO3 Solid-Solution Based Thin Film Transistors
5. Optical and transport properties of lanthanum-doped stannate BaSnO3
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