Size-independent peak external quantum efficiency (>2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California 93106, USA
2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Funder
Solid State Lighting and Energy Electronics Center, University of California Santa Barbara
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0061940
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5. Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition
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