Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1823024
Reference46 articles.
1. Substrates for gallium nitride epitaxy
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5. Crystal growth of gallium nitride in supercritical ammonia
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