Raman mapping of epitaxial lateral overgrown GaN: Stress at the coalescence boundary
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1400092
Reference22 articles.
1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
2. Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
3. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
4. Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods
5. Defect structure in selectively grown GaN films with low threading dislocation density
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