Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon-Reference-Cited by-同舟云学术

Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon

Published:2003-07-28 Issue:4 Volume:83 Page:740-742
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Frank Martin M.,Chabal Yves J.,Green Martin L.,Delabie Annelies,Brijs Bert,Wilk Glen D.,Ho Mun-Yee,da Rosa Elisa B. O.,Baumvol Israel J. R.,Stedile Fernanda C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1595719

Reference17 articles.

1. Al3O3 thin film growth on Si(100) using binary reaction sequence chemistry

2. Sequential surface chemical reaction limited growth of high quality Al2O3dielectrics

3. High-resolution depth profiling in ultrathin Al2O3 films on Si

4. Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor

5. Materials Characterization of Alternative Gate Dielectrics

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