GaAs/Ge crystals grown on Si substrates patterned down to the micron scale-Reference-Cited by-同舟云学术

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Author:

Taboada A. G.¹,Meduňa M.²³,Salvalaglio M.⁴,Isa F.¹⁵,Kreiliger T.¹,Falub C. V.¹,Barthazy Meier E.⁶,Müller E.⁶,Miglio L.⁴,Isella G.⁵,von Känel H.¹

Affiliation:

1. Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg. 1, CH-8093 Zürich, Switzerland

2. Department of Condensed Matter Physics, Masaryk University, Kotlářská 2, CZ-61137 Brno, Czech Republic

3. CEITEC, Masaryk University Kamenice 5, CZ-60177 Brno, Czech Republic

4. L-NESS, Department of Materials Science, Università di Milano-Bicocca, Via R. Cozzi 55, I-20125 Milano, Italy

5. L-NESS and Department of Physics, Politecnico di Milano, via Anzani 42, I-22100 Como, Italy

6. Scientific Center for Optical and Electron Microscopy (ScopeM), ETH Zürich, Auguste-Piccard-Hof 1, CH-8093 Zürich, Switzerland

Funder

CEITEC open acces project, Czech Ministry of Eucation

ETH Research Grant

Research4Industry

Swiss National Science Foundation, DACH Program, Project NOVIPIX

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference55 articles.

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