Phonon transport across GaAs/Ge heterojunctions by nonequilibrium molecular dynamics

Abstract

Interfaces are ubiquitous in modern electronics and assessing their properties is crucial when it comes to device reliability. Here, we present nonequilibrium molecular dynamics calculations of heat transport across GaAs/Ge heterojunctions. We compute the thermal boundary resistance, considering different interface morphologies, ranging from atomically flat to gradual or rough interfaces. We also discuss the implications for thermal rectification and predict a rectification coefficient as large as 30%.