Relation between Raman frequency and triaxial stress in Si for surface and cross-sectional experiments in microelectronics components
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4927133
Reference45 articles.
1. Cu pumping in TSVs: Effect of pre-CMP thermal budget
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4. Stress evolution in surrounding silicon of Cu-filled through-silicon via undergoing thermal annealing by multiwavelength micro-Raman spectroscopy
5. Investigation of local stress around TSVs by micro-Raman spectroscopy and finite element simulation
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