Relation between Raman frequency and triaxial stress in Si for surface and cross-sectional experiments in microelectronics components
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4927133
Reference45 articles.
1. Cu pumping in TSVs: Effect of pre-CMP thermal budget
2. Measurement of temperature-dependent stress in copper-filled silicon vias using polarized Raman spectroscopy
3. Wafer thinning, bonding, and interconnects induced local strain/stress in 3D-LSIs with fine-pitch high-density microbumps and through-Si vias
4. Stress evolution in surrounding silicon of Cu-filled through-silicon via undergoing thermal annealing by multiwavelength micro-Raman spectroscopy
5. Investigation of local stress around TSVs by micro-Raman spectroscopy and finite element simulation
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