Measurement of temperature-dependent stress in copper-filled silicon vias using polarized Raman spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4848115
Reference31 articles.
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4. Silicide and Shallow Trench Isolation line width dependent stress induced junction leakage
5. Characterization and elimination of trench dislocations
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