Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)-Reference-Cited by-同舟云学术

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Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

Published:2012-12-15 Issue:12 Volume:112 Page:123514
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sadia Cyril P.,Maria Laganapan Aleena,Agatha Tumanguil Mae,Estacio Elmer,Somintac Armando,Salvador Arnel,Que Christopher T.,Yamamoto Kohji,Tani Masahiko

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4770267

Reference23 articles.

1. Epitaxial growth and formation of interfacial misfit array for tensile GaAs on GaSb

2. MBE growth, photoluminescence and lasing properties of tensile-strained GaAs/GaSbAs QD nanostructures

3. Asymmetric tilt interface induced by 60° misfit dislocation arrays in GaSb/GaAs(001)

4. Generation of femtosecond electromagnetic pulses from semiconductor surfaces

5. Enhanced terahertz emission from impurity compensated GaSb

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation;Thin Solid Films;2018-02

2. Interruption-assisted epitaxy of faceted p-InAs on buffered GaSb for terahertz emitters;Applied Physics Express;2015-02-06

3. Hard thin films;Anti-Abrasive Nanocoatings;2015

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