Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress-Reference-Cited by-同舟云学术

Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

Published:2014-07-21 Issue:3 Volume:105 Page:033512
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lagger P.,Steinschifter P.,Reiner M.,Stadtmüller M.,Denifl G.,Naumann A.,Müller J.,Wilde L.,Sundqvist J.,Pogany D.,Ostermaier C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4891532

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