Two-dimensional electron gas at the AlGaN/GaN interface: Layer thickness dependence-Reference-Cited by-同舟云学术

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Two-dimensional electron gas at the AlGaN/GaN interface: Layer thickness dependence

Published:2020-03-21 Issue:11 Volume:127 Page:115703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Popok Vladimir N.¹^ORCID,Caban Piotr A.²,Michalowski Pawel Piotr²^ORCID,Thorpe Ryan³,Feldman Leonard C.³,Pedersen Kjeld¹

Affiliation:

1. Department of Materials and Production, Aalborg University, 9220 Aalborg, Denmark

2. Institute of Electronic Materials Technology, 01-919 Warsaw, Poland

3. Department of Physics & Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, USA

Funder

Innovation Fund Denmark

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5142766

Reference30 articles.

1. A Survey of Wide Bandgap Power Semiconductor Devices

2. GaN/Si(111) Device Defects and Degradation Mechanisms

3. Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

4. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

5. A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

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1. Drain current sensitivity analysis using a surface potential-based analytical model for AlGaN/GaN double gate MOS-HEMT;Micro and Nanostructures;2024-01

2. HADOKEN: An open-source software package for predicting electron confinement effects in various nanowire geometries and configurations;Computer Physics Communications;2022-05

3. High electron mobility transistor-based hydrogen sensor using ITO as a sensing layer;2021 IEEE Sensors;2021-10-31

4. Understanding the onset of negative electronic compressibility in single-band and two-band two-dimensional electron gases: Application to LaAlO3/SrTiO3;Physical Review B;2021-03-19

5. Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges;IEEE Access;2021

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