Ab-initio calculation study on the formation mechanism of boron-oxygen complexes in c-Si
Author:
Affiliation:
1. State Key Laboratory of Silicon Materials and Department of Materials Science & Engineering, Zhejiang University, Hangzhou 310027, China
Funder
National Key Technology R&D Program
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/7/1.4927498.pdf?itemId=/content/aip/journal/adva/5/7/10.1063/1.4927498&mimeType=pdf&containerItemId=content/aip/journal/adva
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4. Characterization of the Initial Rapid Decay on Light-Induced Carrier Lifetime and Cell Performance Degradation of Czochralski-Grown Silicon
5. Fast-forming boron-oxygen-related recombination center in crystalline silicon
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