Effect of wet oxidized AlxGa1−xAs layer on the interdiffusion of InGaAs/GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367505
Reference14 articles.
1. Coupled‐stripe in‐phase operation of planar native‐oxide index‐guided AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well heterostructure laser arrays
2. High‐reflectivity visible‐wavelength semiconductor native oxide Bragg reflectors grown by metalorganic chemical vapor deposition
3. Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation
4. AlxGa1−xAs–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs
5. Implantation disordering of AlxGa1−xAs superlattices
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1. Impurity-Free Vacancy Diffusion of InGaAsP/InGaAsP Multiple Quantum Well Structures Using SiH4-Dependent Dielectric Cappings;Japanese Journal of Applied Physics;2007-10-09
2. Anneal-induced interdiffusion in 1.3-μmGaInNAs∕GaAs quantum well structures grown by molecular-beam epitaxy;Journal of Applied Physics;2006-01
3. Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiquantum-well structure by dielectric capping layers;Applied Physics A;2004-01
4. Dependence of band gap energy shift of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering on stoichiometry of SiOx and SiNx capping layers;Journal of Applied Physics;2002-04
5. Effects of rapid thermal annealing on the optical properties of In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells with InGaAs and dielectric capping layers;Journal of Applied Physics;2002-02-15
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