dc and ac transport in molecular‐beam‐epitaxy‐grown metal/ZnSe/GaAs heterojunction structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344397
Reference12 articles.
1. Materials growth and its impact on devices from wide band gap II–VI compounds
2. Growth of undoped ZnSe on (100) GaAs by molecular‐beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratio
3. Effect of lattice mismatch in ZnSe epilayers grown on GaAs by molecular beam epitaxy
4. Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs
5. Structural properties of the ZnSe/GaAs system grown by molecular‐beam epitaxy
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1. Determination of conduction band offset between strained CdSe and ZnSe layers using deep level transient spectroscopy;Applied Physics Letters;2012-06-18
2. Forward Bias Capacitance-Voltage Measurements on Semiconductors Using Co-Planar Ohmic and Schottky Contacts in a Cylindrical Geometry;Journal of Nano Research;2010-12
3. Growth of strained ZnSe layers on GaAs substrates by pulsed laser deposition carried out in an off-axis deposition geometry;Thin Solid Films;2007-07
4. Controlling interface reactivity and Schottky barrier height in Au∕ZnSe(001) junctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
5. Contactless Microwave Hall Effect Transport in ZnSe;33rd European Microwave Conference, 2003;2003-10
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