Controlling interface reactivity and Schottky barrier height in Au∕ZnSe(001) junctions-Reference-Cited by-同舟云学术

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Controlling interface reactivity and Schottky barrier height in Au∕ZnSe(001) junctions

Published:2006 Issue:3 Volume:24 Page:1259
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Pelucchi E.,Kumar D.,Lazzarino M.,Rubini S.,Franciosi A.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasmon-induced resonant effects on the optical properties of Ag-decorated ZnSe nanowires;Nanotechnology;2020-02-10

2. Ultrafast optical spectroscopy of semiconducting and plasmonic nanostructures and their hybrids;Nanotechnology;2020-01-08

3. X-ray photoelectron spectroscopy measurement of the Schottky barrier at the SiC(N)/Cu interface;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-09

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