Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide-Reference-Cited by-同舟云学术

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Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide

Published:2020-10-19 Issue:16 Volume:117 Page:162901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Islamov Damir R.¹²^ORCID,Zalyalov Timur M.¹²,Orlov Oleg M.³^ORCID,Gritsenko Vladimir A.¹²^ORCID,Krasnikov Gennady Ya.³

Affiliation:

1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk 630090, Russian Federation

2. Novosibirsk State University, Novosibirsk 630090, Russian Federation

3. SC Molecular Electronics Research Institute, Zelenograd, Moscow 124460, Russian Federation

Funder

Russian Foundation for Basic Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0023554

Reference30 articles.

1. Ferroelectronic ram memory family for critical data storage

2. Ferroelectricity in hafnium oxide thin films

3. Phase transitions in ferroelectric silicon doped hafnium oxide

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3. Phase Transformations Driving Biaxial Stress Reduction During Wake‐Up of Ferroelectric Hafnium Zirconium Oxide Thin Films;Advanced Electronic Materials;2024-06-21

4. Development of ferroelectricity with crystallographic phase transformation in Hf_0.5Zr_0.5O₂ thin films upon initial stimulation of an electric field exceeding the coercive field;Japanese Journal of Applied Physics;2024-04-01

5. Interfacial Layer Selection Methodology for Customized Ferroelectric Memories;IEEE Transactions on Electron Devices;2024-03

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