Column III vacancy‐ and impurity‐induced layer disordering of AlxGa1−xAs‐GaAs heterostructures with SiO2or Si3N4diffusion sources
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345070
Reference12 articles.
1. Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion
2. Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−xAs‐GaAs quantum‐well heterostructures
3. Room‐temperature exciton transitions in partially intermixed GaAs/AlGaAs superlattices
4. Disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers by diffusion of silicon and oxygen from Al‐reduced SiO2
5. Spatially selective modification of GaAs/AlGaAs quantum wells by SiO2capping and rapid thermal annealing
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1. Selective layer disordering in intersubband Al0.028Ga0.972N/AlN superlattices with silicon nitride capping layer;Applied Physics Express;2015-06-01
2. Selective and tunable red- or blue-shift emissions of GaAsP quantum well heterostructures;Novel In-Plane Semiconductor Lasers XIV;2015-03-10
3. Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors;IEEE Journal of Quantum Electronics;2011-05
4. CW and mode-locked integrated extended cavity lasers fabricated using impurity free vacancy disordering;IEEE Journal of Selected Topics in Quantum Electronics;1997-06
5. Evidence of stress dependence in SiO2/Si3N4 encapsulation-based layer disordering of GaAs/AlGaAs quantum well heterostructures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-01
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