Spatially selective modification of GaAs/AlGaAs quantum wells by SiO2capping and rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101776
Reference15 articles.
1. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures
2. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
3. Disorder of an AlxGa1−xAs‐GaAs superlattice by donor diffusion
4. Thermal annealing and photoluminescence measurements on AlxGa1−xAs‐GaAs quantum‐well heterostructures with Se and Mg sheet doping
5. Laser induced disordering of GaAs‐AlGaAs superlattice and incorporation of Si impurity
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