Optical studies of Ge islanding on Si(111)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118169
Reference20 articles.
1. Raman scattering from GexSi1−x/Si strained‐layer superlattices
2. A review of theoretical and experimental work on the structure of GexSi1-xstrained layers and superlattices, with extensive bibliography
3. Optical properties of Ge-Si alloys and superlattices
4. Dependence of the interface sharpness of a Ge single quantum well on molecular‐beam‐epitaxial growth conditions
5. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
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