Electronically enhanced surface diffusion during Ge growth on Si(100)
Author:
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3567918
Reference43 articles.
1. Excitation-induced germanium quantum dot formation on Si(100)-(2×1)
2. Electron-beam-assisted evaporation of epitaxial CeO2 thin films on Si substrates
3. Low temperature epitaxial growth of Ge quantum dot on Si(100)-(2×1) by femtosecond laser excitation
4. Self-organization of an ensemble of Ge nanoclusters upon pulsed irradiation with low-energy ions during heteroepitaxy on Si
5. Modification of quantum dots in Ge/Si nanostructures by pulsed laser irradiation
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