Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)

Author:

Bremner S. P.,Ban K.-Y.,Faleev N. N.,Honsberg C. B.,Smith D. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Antimony composition impact on band alignment in InAs/GaAsSb quantum dots;Solid State Communications;2024-11

2. Asymmetric X-ray diffraction of confined beams in crystals;Proceedings of the Komi Science Centre of the Ural Division of the Russian Academy of Sciences;2024-08-07

3. Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure;Applied Physics Letters;2019-08-26

4. Investigation of defect creation in GaP/Si(0 0 1) epitaxial structures;Journal of Crystal Growth;2018-12

5. Submonolayer Quantum Dots for Optoelectronic Devices;Journal of the Korean Physical Society;2018-09

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