Silicon doping and impurity profiles in Ga0.47In0.53As and Al0.48In0.52As grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331224
Reference22 articles.
1. Growth of extremely uniform layers by rotating substrate holder with molecular beam epitaxy for applications to electro‐optic and microwave devices
2. Molecular‐beam epitaxial growth of uniform Ga0.47In0.53As with a rotating sample holder
3. High mobility GaAs-AlxGa1−xAs single period modulation-doped heterojunctions
4. The Use of Si and Be Impurities for Novel Periodic Doping Structures in GaAs Grown by Molecular Beam Epitaxy
5. Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxy
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2. Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0.53Ga0.47As;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-03
3. Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate;Applied Physics Express;2014-04-01
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